First demonstration of ``Leaky Integrate and Fire{''} artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film

Citation:

C. Adda, et al., “First demonstration of ``Leaky Integrate and Fire{''} artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film”, MRS COMMUNICATIONS, vol. 8, p. 835-841, 2018.

Abstract:

A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)(2)O-3 were deposited by magnetron sputtering and patterned with micron-scale TIN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)(2)O-3 thin films.

DOI:

10.1557/mrc.2018.90