Publications

2018
C. Adda, et al., “First demonstration of ``Leaky Integrate and Fire{''} artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film”, MRS COMMUNICATIONS, vol. 8, p. 835-841, 2018.Abstract
A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)(2)O-3 were deposited by magnetron sputtering and patterned with micron-scale TIN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)(2)O-3 thin films.
F. Tesler, et al., “Relaxation of a Spiking Mott Artificial Neuron”, PHYSICAL REVIEW APPLIED, vol. 10, p. 054001, 2018.Abstract
We consider the phenomenon of electric Mott transition (EMT), which is an electrically induced insulator-to-metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation, the final state may show a short-lived or a long-lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing, the induced metastable phase may become further stabilized by the electroelastic effect. We present a systematic study of the model by numerical simulations and compare the results to experiments in Mott insulators of the AM(4)Q(8) family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott neuron {[}P. Stoliar et al., Adv. Funct. Mat. 27, 1604740 (2017)] to provide a better insight into the physical mechanism of its relaxation. This is a key feature for future implementations of neuromorphic circuits.